SST39SF010

www.DataSheet4U.com 512 Kbit / 1 Mbit (x8) Multi-Purpose Flash SST39SF512 / SST39SF010 SST39SF512 / 0105.0V 512Kb / 1Mb (x8) MPF memories Data Sheet FEATURES: Organized as 64K x8 / 128K x8 Single 5.0V Read and Write Operations Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention Low Power Consumption: – Active Current: 20 mA (typical) – Standby Current: 10 µA (typical) Sector-Erase Capability – Uniform 4 KByte sectors Fast Read Access Time: – 70 ns – 90 ns Latched Address and Data Fast Erase and Byte-Program: – Sector-Erase Time: 7 ms (typical) – Chip-Erase Time: 15 ms (typical) – Byte-Program Time: 20 µs (typical) – Chip Rewrite Time: 2 seconds (typical) for SST39SF512 3 seconds (typical) for SST39SF010 Automatic Write Timing – Internal VPP Generation End-of-Write Detection – Toggle Bit – Data# Polling TTL I/O Compatibility JEDEC Standard – Flash EEPROM Pinouts and command sets Packages Available – 32-pin PLCC – 32-pin TSOP (8mm x 14mm) – 32-pin PDIP PRODUCT DESCRIPTION The SST39SF512/010 are CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF512/010 devices write (Program or Erase) with a 5.0V-only power supply. The SST39SF512/010 device conforms to JEDEC standard pinouts for x8 memor...