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SST39VF010 Datasheet

Part Number SST39VF010
Manufacturers Silicon Storage Technology
Logo Silicon Storage Technology
Description CMOS Multi-Purpose Flash
Datasheet SST39VF010 DatasheetSST39VF010 Datasheet (PDF)

1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash SST39LF010 / SST39LF020 / SST39LF040 SST39VF010 / SST39VF020 / SST39VF040 Data Sheet The SST39LF010, SST39LF020, SST39LF040 and SST39VF010, SST39VF020, SST39VF040 are 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approa.

  SST39VF010   SST39VF010






Part Number SST39VF016
Manufacturers Silicon Storage Technology
Logo Silicon Storage Technology
Description (SST39VF080 / SST39VF016 / SST39LF080 / SST39LF016) 8 Mbit / 16 Mbit (x8) Multi-Purpose Flash
Datasheet SST39VF010 DatasheetSST39VF016 Datasheet (PDF)

8 Mbit / 16 Mbit (x8) Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 SST39LF/VF080 / 0163.0 & 2.7V 8Mb / 16Mb (x8) MPF memories Data Sheet FEATURES: • Organized as 1M x8 / 2M x8 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF080/016 – 2.7-3.6V for SST39VF080/016 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption: – Active Current: 15 mA (typical) – Standby Current: 4 µA (typical) .

  SST39VF010   SST39VF010







CMOS Multi-Purpose Flash

1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash SST39LF010 / SST39LF020 / SST39LF040 SST39VF010 / SST39VF020 / SST39VF040 Data Sheet The SST39LF010, SST39LF020, SST39LF040 and SST39VF010, SST39VF020, SST39VF040 are 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF010/020/040 devices write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF010/020/040 devices write with a 2.7-3.6V power supply. The devices conform to JEDEC standard pinouts for x8 memories. Features • Organized as 128K x8 / 256K x8 / 512K x8 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF010/020/040 – 2.7-3.6V for SST39VF010/020/040 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption (typical values at 14 MHz) – Active Current: 5 mA (typical) – Standby Current: 1 µA (typical) • Sector-Erase Capability – Uniform 4 KByte sectors • Fast Read Access Time: – 55 ns for SST39LF010/020/040 – 70 ns for SST39VF010/020/040 • Latched Address and Data • Fast Erase and Byte-Program: – Sector-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical) – Chip Rewrite Time: 2 seconds (typical) for SST39LF/VF010 4 seconds (typical) for SST39.


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