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SST39VF088 Datasheet

Part Number SST39VF088
Manufacturers Silicon Storage Technology
Logo Silicon Storage Technology
Description 8 Mbit (x8) Multi-Purpose Flash
Datasheet SST39VF088 DatasheetSST39VF088 Datasheet (PDF)

8 Mbit (x8) Multi-Purpose Flash SST39VF088 SST39VF0882.7V 8Mb (x8) MPF memory Preliminary Specifications FEATURES: • Organized as 1M x8 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption (typical values at 5 MHz) – Active Current: 12 mA (typical) – Standby Current: 4 µA (typical) • Sector-Erase Capability – Uniform 4 KByte sectors • Block-Erase Capability – Uniform 64.

  SST39VF088   SST39VF088






Part Number SST39VF080
Manufacturers Silicon Storage Technology
Logo Silicon Storage Technology
Description (SST39VF080 / SST39VF016 / SST39LF080 / SST39LF016) 8 Mbit / 16 Mbit (x8) Multi-Purpose Flash
Datasheet SST39VF088 DatasheetSST39VF080 Datasheet (PDF)

8 Mbit / 16 Mbit (x8) Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 SST39LF/VF080 / 0163.0 & 2.7V 8Mb / 16Mb (x8) MPF memories Data Sheet FEATURES: • Organized as 1M x8 / 2M x8 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF080/016 – 2.7-3.6V for SST39VF080/016 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption: – Active Current: 15 mA (typical) – Standby Current: 4 µA (typical) .

  SST39VF088   SST39VF088







8 Mbit (x8) Multi-Purpose Flash

8 Mbit (x8) Multi-Purpose Flash SST39VF088 SST39VF0882.7V 8Mb (x8) MPF memory Preliminary Specifications FEATURES: • Organized as 1M x8 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption (typical values at 5 MHz) – Active Current: 12 mA (typical) – Standby Current: 4 µA (typical) • Sector-Erase Capability – Uniform 4 KByte sectors • Block-Erase Capability – Uniform 64 KByte blocks • Fast Read Access Time: – 70 and 90 ns • Latched Address and Data • Fast Erase and Byte-Program – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical) – Chip Rewrite Time: 15 seconds (typical) • Automatic Write Timing – Internal VPP Generation • End-of-Write Detection – Toggle Bit – Data# Polling • CMOS I/O Compatibility • JEDEC Standard – Flash EEPROM Pinouts and command sets • Packages Available – 48-lead TSOP (12mm x 20mm) PRODUCT DESCRIPTION The SST39VF088 device is a 1M x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF088 writes (Program or Erase) with a 2.7-3.6V power supply. It conforms to JEDEC standard pinouts for x8 memories. Featuring high performance.


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