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SST39VF1602 Datasheet

Part Number SST39VF1602
Manufacturers Silicon Storage Technology
Logo Silicon Storage Technology
Description 16 Mbit / 32 Mbit / (x16) Multi-Purpose Flash Plus
Datasheet SST39VF1602 DatasheetSST39VF1602 Datasheet (PDF)

A Microchip Technology Company Not recommended for new designs. Please use SST39VF1601C and SST39VF3201B. 16 Mbit / 32 Mbit / (x16) Multi-Purpose Flash Plus SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 Not Recommended for New Designs The SST39VF1601/1602 and SST39VF3201/3202 devices are 1M x16 and 2M x16, respectively, CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST's proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick-oxide tunnelin.

  SST39VF1602   SST39VF1602






Part Number SST39VF160Q
Manufacturers Silicon Storage Technology
Logo Silicon Storage Technology
Description 16 Megabit (1M x 16-Bit) Multi-Purpose Flash
Datasheet SST39VF1602 DatasheetSST39VF160Q Datasheet (PDF)

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  SST39VF1602   SST39VF1602







Part Number SST39VF1602C
Manufacturers Microchip
Logo Microchip
Description 16 Mbit (x16) Multi-Purpose Flash Plus
Datasheet SST39VF1602 DatasheetSST39VF1602C Datasheet (PDF)

SST39VF1601C/SST39VF1602C 16 Mbit (x16) Multi-Purpose Flash Plus The SST39VF1601C / SST39VF1602C devices are 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF1601C / SST39VF1602C write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC st.

  SST39VF1602   SST39VF1602







Part Number SST39VF1601C
Manufacturers Microchip
Logo Microchip
Description 16 Mbit (x16) Multi-Purpose Flash Plus
Datasheet SST39VF1602 DatasheetSST39VF1601C Datasheet (PDF)

SST39VF1601C/SST39VF1602C 16 Mbit (x16) Multi-Purpose Flash Plus The SST39VF1601C / SST39VF1602C devices are 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF1601C / SST39VF1602C write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC st.

  SST39VF1602   SST39VF1602







Part Number SST39VF1601
Manufacturers Silicon Storage Technology
Logo Silicon Storage Technology
Description 16 Mbit / 32 Mbit / (x16) Multi-Purpose Flash Plus
Datasheet SST39VF1602 DatasheetSST39VF1601 Datasheet (PDF)

A Microchip Technology Company Not recommended for new designs. Please use SST39VF1601C and SST39VF3201B. 16 Mbit / 32 Mbit / (x16) Multi-Purpose Flash Plus SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 Not Recommended for New Designs The SST39VF1601/1602 and SST39VF3201/3202 devices are 1M x16 and 2M x16, respectively, CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST's proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick-oxide tunnelin.

  SST39VF1602   SST39VF1602







16 Mbit / 32 Mbit / (x16) Multi-Purpose Flash Plus

A Microchip Technology Company Not recommended for new designs. Please use SST39VF1601C and SST39VF3201B. 16 Mbit / 32 Mbit / (x16) Multi-Purpose Flash Plus SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 Not Recommended for New Designs The SST39VF1601/1602 and SST39VF3201/3202 devices are 1M x16 and 2M x16, respectively, CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST's proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF1601/1602/ 3201/3202 write (Program or Erase) with a 2.7-3.6V power supply. These devices conforms to JEDEC standard pinouts for x16 memories. Features • Organized as 1M x16: SST39VF1601/1602 2M x16: SST39VF3201/3202 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (Typical) – Greater than 100 years Data Retention • Low P.


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