SST39VF400A

2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A A Microchip Technology Company SST39VF200A / SST39VF400A / SST39VF800A Data Sheet The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF200A/400A/800A write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF200A/400A/ 800A write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories. Features: Organized as 128K x16 / 256K x16 / 512K x16 Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF200A/400A/800A – 2.7-3.6V for SST39VF200A/400A/800A Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention Low Power Consumption (typical values at 14 MHz) – Active Current: 9 mA (typical) – Standby Current: 3 µA (typical) Sector-Erase Capability – Uniform 2 KWord sectors Block-Erase Capability – Uniform 32 KWord blocks Fast Read Access Time – 55 ns for SST39LF200A/400A/800A – 70 ns for SST39VF200A/400A/800A Latched Address and Data Fast Erase and Word-Program – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ...