SST4117

SST4117 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix SST4117 The SST4117 is an Ultra-High Input Impedance N-Channel JFET The SST4117 provides ultra-high input impedance. The device is specified with a 10-pA limit and is ideal for use as a high-impedance sensitive front-end amplifier. FEATURES  DIRECT REPLACEMENT FOR SILICONIX SST4117  LOW POWER  MINIMUM CIRCUIT LOADING  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation   MAXIMUM CURRENT Gate Current (Note 1)  MAXIMUM VOLTAGES  Gate to Drain or Gate to Source (Note 2)    IDSS<90 µA   IGSS<10 pA  SST4117 Benefits: ƒ ƒ ƒ ƒ Insignificant Signal Loss/Error Voltage with High-Impedance Source Low Power Consumption (Battery) Maximum Signal Output, Low Noise High Sensitivity to Low-Level Signals ‐65°C to +175°C  ‐55°C to +150°C  300mW  50mA  ‐40V    SST4117 Applications: ƒ ƒ ƒ ƒ High-Impedance Transducer Smoke Detector Input Infrared Detector Amplifier Precision Test Equipment   SST4117 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTIC  MIN  TYP.  MAX  UNITS  CONDITIONS  BVGSS  Gate to Source Breakdown Voltage  ‐40  ‐‐  ‐‐  V  IG = ‐1µA,   VDS = 0V  VGS(off)  Gate to Source Cutoff Voltage  ‐0.6  ‐‐  ‐1.8  V                    VDS = 10V,   ID = 1nA  IDSS  Gate to Source Saturation Current  0.03  ‐‐  0.09  mA  VDS = 10V,   VGS = 0V  IGSS  Gate ...