n-channel JFETs
designed for • • •
• General Purpose Amplifiers
H
Siliconix
Performance Curves NPA, NH See SecHon 4
BEN...
n-channel JFETs
designed for
General Purpose
Amplifiers
H
Siliconix
Performance Curves NPA, NH See SecHon 4
BENEFITS
Low Cost High Input Impedance
IG = 35 pA Typically
Low Noise en = 5 nV1y'Hz Typically @ 1 kHz
ABSOLUTE MAXIMUM RATINGS (25°C)
.......Gate-Drain or Gate-Source
Voltage (Note 1)
-30V
Gate Current ............................... 50 rnA
Total Device Dissipation at 25°C Ambient. (Derate 3.27 mWtC) . ..................... 360 mW
Operating Temperature Range ............. -55 to 135°C
Storage Temperature Range............... -55 to 150°C
Lead Temperature Range
(1/16" from case for 10 seconds) ..............300°C
ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
TO-92 See Section 6
.~: Plastic
G
D
GO D
DD
Bottom View
1 I- S
12-
T A
! --2- T
I4-
I
e
5
6
1-
7
1-
8
I-
D y
N
9A
I-
M I
10 C
l-
11
-
12
Characteristic
IGSS 8VGSS VGS(otf) lOSS 91s
90s Crss
C1SS
COG
Gate Reverse Current (Note 2)
Gate-Source Breakdown
Voltage Gate-Source Cutoff
Voltage Saturation Drain Current (Note 31 Common-Source Forward Transconductance (Note 31 Common-Source Output Conductance Common-5ource Reverse Transfer Capacitance Common-Source Input Capacltance
Drain-Gate Capacitance
NF NOise FIgure
Common-Source Short Circuit IVlsl Forward Transadmlttance
(Note 3)
PN4302 Mon Max
1 01 -30 -40 0.5 5.0
PN4303 Min Max
-1 --0.1
-30
~O
4.0 10
PN4304 Min Max
-1 --0.1
-30 -10
0.5 15
1000
2000
1000
50 50 50
333
666
222
2.0 20 3.0
700 1400
7...
