SST4443
Elektronische Bauelemente -2.3A , -30V , RDS(ON) 120 mΩ P-Channel Enhancement Mode MOSFET
RoHS Compliant Produc...
SST4443
Elektronische Bauelemente -2.3A , -30V , RDS(ON) 120 mΩ P-Channel Enhancement Mode
MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SST4443 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial-industrial applications. SOT-26
D
FEATURES
Simple Drive Requirement Smaller Outline Package Surface mount package
E
REF.
H A
C
B
J K G
Millimeter Min. Max. 0.37 REF. 0.30 0.55 0.12 REF. 0.10
L
Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.20 REF. 1.40 1.80 0.95 REF. 0.60 REF. REF. G H J K L
F
MARKING
4443
Date Code
A B C D E F
TOP VIEW
PACKAGE INFORMATION
Package SOT-26 MPQ 3K Leader Size 7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg
1 3
Symbol
VDS VGS TA=25° C TA=70° C IDM TA=25° C PD ID
Ratings
-30 ±20 -2.3
Unit
V V A
-1.8 -10 1.14 0.01 -55~150 A W W/° C ° C
Thermal Resistance Rating
Maximum Junction to Ambient
3
RθJA
110
° C/W
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
23-Oct-2013 Rev. A
Page 1 of 4
SST4443
Elektronische Bauelemente -2.3A , -30V , RDS(ON) 120 mΩ P-Channel Enhancement Mode
MOSFET
ELECTRICAL CH...