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SST4443

SeCoS Halbleitertechnologie

N-Channel MOSFET

SST4443 Elektronische Bauelemente -2.3A , -30V , RDS(ON) 120 mΩ P-Channel Enhancement Mode MOSFET RoHS Compliant Produc...


SeCoS Halbleitertechnologie

SST4443

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Description
SST4443 Elektronische Bauelemente -2.3A , -30V , RDS(ON) 120 mΩ P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SST4443 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial-industrial applications. SOT-26 D FEATURES Simple Drive Requirement Smaller Outline Package Surface mount package E REF. H A C B J K G Millimeter Min. Max. 0.37 REF. 0.30 0.55 0.12 REF. 0.10 L Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.20 REF. 1.40 1.80 0.95 REF. 0.60 REF. REF. G H J K L F MARKING 4443 Date Code A B C D E F TOP VIEW PACKAGE INFORMATION Package SOT-26 MPQ 3K Leader Size 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 1 3 Symbol VDS VGS TA=25° C TA=70° C IDM TA=25° C PD ID Ratings -30 ±20 -2.3 Unit V V A -1.8 -10 1.14 0.01 -55~150 A W W/° C ° C Thermal Resistance Rating Maximum Junction to Ambient 3 RθJA 110 ° C/W http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 23-Oct-2013 Rev. A Page 1 of 4 SST4443 Elektronische Bauelemente -2.3A , -30V , RDS(ON) 120 mΩ P-Channel Enhancement Mode MOSFET ELECTRICAL CH...




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