SST5911

N-Channel JFET Monolithic Dual CORPORATION SST5911 / SST5912 FEATURES DESCRIPTION The SST5912 is a High Speed N-Channel Monolithic JFET pair encapsulated in a surface mount plastic SO-8 package. The device is designed for high gain (typically > 6000 µmhos), low leakage ( < 1pA typically) and low noise, The SST5912 is an excellent choice for differential wideband amplifiers, VHF/UHF amplifiers and test and measurement. ORDERING INFORMATION Part Package Temperature Range -55oC to +150oC SST5912 Plastic SO-8 Package High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gfs > 6 mS Low Leakage . . . . . . . . . . . . . . . . . . . . . . IG < 1pA typical Noise Low Surface Mount Package Differential Wideband Amplifier VHF/UHF Amplifiers Test and Measurement APPLICATIONS NOTE: For Sorted Chips in Carriers, See 2N5911 Series PIN CONFIGURATION SO-8 TOP VIEW (1) S1 (2) D1 (3) G1 (4) N/C N/C (8) G2 (7) D2 (6) S2 (5) CJ1 PRODUCT MARKING SST5912 SST5912 ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Parameter/Test Condition Gate-Drain Voltage Gate-Source Voltage Forward Gate Current Power Dissipation (per side) (total) Power Derating (per side) (total) Operating Junction Temperature Storage Temperature Lead Temperature (1/16" from case for 10 seconds) Symbol VGD VGS IG PD Limit -25 -25 50 300 500 2.4 4 -55 to 150 -65 to 150 300 Unit V V mA mW mW mW/ oC mW/ oC o C o C o C TJ Tstg TL SST5911 / SST5912 CORPORATION ELECTRICAL CHARACTERISTI...