N-Channel JFET Monolithic Dual
CORPORATION
SST5911 / SST5912
FEATURES DESCRIPTION The SST5912 is a High Speed N-Channel...
N-Channel JFET Monolithic Dual
CORPORATION
SST5911 / SST5912
FEATURES DESCRIPTION The SST5912 is a High Speed N-Channel Monolithic JFET pair encapsulated in a surface mount plastic SO-8 package. The device is designed for high gain (typically > 6000 µmhos), low leakage ( < 1pA typically) and low noise, The SST5912 is an excellent choice for differential wideband
amplifiers, VHF/UHF
amplifiers and test and measurement. ORDERING INFORMATION Part Package Temperature Range -55oC to +150oC SST5912 Plastic SO-8 Package
High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gfs > 6 mS Low Leakage . . . . . . . . . . . . . . . . . . . . . . IG < 1pA typical Noise Low Surface Mount Package Differential Wideband Amplifier VHF/UHF
Amplifiers Test and Measurement
APPLICATIONS
NOTE: For Sorted Chips in Carriers, See 2N5911 Series
PIN CONFIGURATION
SO-8
TOP VIEW (1) S1 (2) D1 (3) G1 (4) N/C N/C (8) G2 (7) D2 (6) S2 (5)
CJ1
PRODUCT MARKING SST5912 SST5912
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Parameter/Test Condition Gate-Drain
Voltage Gate-Source
Voltage Forward Gate Current Power Dissipation (per side) (total) Power Derating (per side) (total) Operating Junction Temperature Storage Temperature Lead Temperature (1/16" from case for 10 seconds) Symbol VGD VGS IG PD Limit -25 -25 50 300 500 2.4 4 -55 to 150 -65 to 150 300 Unit V V mA mW mW mW/ oC mW/ oC o C o C o C
TJ Tstg TL
SST5911 / SST5912
CORPORATION
ELECTRICAL CHARACTERISTI...