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SST8205S

SeCoS

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente SST8205S 6.0A , 20V , RDS(ON) 28 m N-Ch Enhancement Mode Power MOSFET RoHS Compliant Produ...


SeCoS

SST8205S

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Description
Elektronische Bauelemente SST8205S 6.0A , 20V , RDS(ON) 28 m N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SST8205S provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The SOT-26 package is universally used for all commercialindustrial surface mount applications. FEATURES  Low on-resistance  Capable of 2.5V gate drive  Low drive current MARKING Date Code SOT-26 A E L B F CH DG K J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.30 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. PACKAGE INFORMATION Package MPQ SOT-26 3K Leader Size 7 inch ABSOLUTE MAXIMUM RATINGS Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3, VGS@4.5V Pulsed Drain Current 1 Power Dissipation Linear Derating Factor TA=25°C TA=70°C TA=25°C VDS VGS ID IDM PD Operating Junction and Storage Temperature Range Tj, Tstg Maximum Junction to Ambient 3 Max. Thermal Resistance Rating RJA Ratings 20 ±10 6 4.8 20 1.14 0.01 -55~150 110 Unit V V A A W W / °C °C °C / W http://www.SeCoSGmbH.com/ 07-Aug-2014 Rev. B Any changes of specification will not be informed individually. Page 1 of 4 Elektronische Bauelemente SST8205S 6.0A , 20V , RDS(ON) 28 m N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (Tj=25°C unless otherwise specified) ...




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