Elektronische Bauelemente
SST8205S
6.0A , 20V , RDS(ON) 28 m N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Produ...
Elektronische Bauelemente
SST8205S
6.0A , 20V , RDS(ON) 28 m N-Ch Enhancement Mode Power
MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SST8205S provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness.
The SOT-26 package is universally used for all commercialindustrial surface mount applications.
FEATURES
Low on-resistance Capable of 2.5V gate drive Low drive current
MARKING
Date Code
SOT-26
A E
L
B
F CH DG K J
REF.
A B C D E F
Millimeter
Min. Max.
2.70 3.10 2.60 3.00 1.40 1.80
1.30 MAX. 1.90 REF. 0.30 0.50
REF.
G H J K L
Millimeter
Min. Max.
0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF.
PACKAGE INFORMATION
Package
MPQ
SOT-26
3K
Leader Size 7 inch
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Current 3, VGS@4.5V
Pulsed Drain Current 1 Power Dissipation Linear Derating Factor
TA=25°C TA=70°C
TA=25°C
VDS VGS
ID
IDM PD
Operating Junction and Storage Temperature Range
Tj, Tstg
Maximum Junction to Ambient 3 Max.
Thermal Resistance Rating
RJA
Ratings
20 ±10
6 4.8 20 1.14 0.01 -55~150
110
Unit
V V
A
A W W / °C °C
°C / W
http://www.SeCoSGmbH.com/
07-Aug-2014 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 4
Elektronische Bauelemente
SST8205S
6.0A , 20V , RDS(ON) 28 m N-Ch Enhancement Mode Power
MOSFET
ELECTRICAL CHARACTERISTICS (Tj=25°C unless otherwise specified)
...