SSTS20100I
Main Product Characteristics:
IF VRRM Tj(max) Vf(max)
20A 100V 150℃ 0.85V
Features and Benefits:
High J...
SSTS20100I
Main Product Characteristics:
IF VRRM Tj(max) Vf(max)
20A 100V 150℃ 0.85V
Features and Benefits:
High Junction Temperature High ESD Protection High Forward & Reverse Surge capability
TO251 SSTS20100I
Schematic Diagram
Description:
Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC convertors; this product special design for high forward and reverse surge capability
Absolute Rating:
Symbol
Characterizes
VRRM Peak Repetitive Reverse
Voltage
VR(RMS) IF(AV) IFSM
RMS Reverse
Voltage Average Forward Current Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
IRRM Peak Repetitive Reverse Surge Current(Tp=2us) TJ Maximum operation Junction Temperature Range Tstg Storage Temperature Range
Value 100 70 20 150 0.5 -55~150 -55~150
Thermal Resistance
Symbol
Characterizes
Maximum Thermal Resistance Junction To
RθJC
Case(per leg)
TO251
Value 3.5
Unit V V A A A ℃ ℃
Unit
℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Characterizes
Min Typ Max Unit
VR Reverse Breakdown
Voltage 100
V
VF Forward
Voltage Drop
0.85 V
0.75
IR Leakage Current
0.1 mA
20
Test Condition
IR=0.5mA IF=20A, TJ=25℃ IF=20A, TJ=125℃ VR=100V, TJ=25℃ VR=100V, TJ=125℃
©Silikron Semiconductor CO., LTD.
2011.8.19
www.silikron.com
Version: 1.0
page 1of5
I-V Curves:
SSTS20100I
Figure 1:Typical Forward Characteristics Figure 2:Typical Capacitance Characteristics
Figure 3:Typical Reverse...