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SSTS3040CT

Silikron Semiconductor

Schottky Barrier Rectifier

SSTS3040CT Main Product Characteristics: IF VRRM Tj(max) Vf(max) 30A 40V 150℃ 0.53V Features and Benefits:  High Ju...


Silikron Semiconductor

SSTS3040CT

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Description
SSTS3040CT Main Product Characteristics: IF VRRM Tj(max) Vf(max) 30A 40V 150℃ 0.53V Features and Benefits:  High Junction Temperature  High ESD Protection  High Forward & Reverse Surge capability TO-220 SSTS3045CT Schematic Diagram Description: Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC convertors; this product special design for high forward and reverse surge capability Absolute Rating: Symbol Characterizes VRRM VR(RMS) IF(AV) Peak Repetitive Reverse Voltage RMS Reverse Voltage Average Forward Current Per diode IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal) IRRM Peak Repetitive Reverse Surge Current(Tp=2us) TJ Maximum operation Junction Temperature Range Tstg Storage Temperature Range Value 40 28 30 200 2 -55~150 -55~150 Thermal Resistance Symbol Characterizes Maximum Thermal Resistance Junction To RθJC Case(per leg) TO220 Value 2 Unit V V A A A ℃ ℃ Unit ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Characterizes Min Typ Max Unit VR Reverse Breakdown Voltage 40 V VF Forward Voltage Drop 0.53 V 0.48 IR Leakage Current 0.5 mA 50 Test Condition IR=0.5mA IF=30A, TJ=25℃ IF=30A, TJ=125℃ VR=40V, TJ=25℃ VR=40V, TJ=125℃ ©Silikron Semiconductor CO., LTD. 2012.9.20 www.silikron.com V1.0(Preliminary) page 1of5 I-V Curves: SSTS3040CT Figure 1:Typical Forward Characteristics Figure 2:Typical Capacitance Characteristics Figure 3:Typica...




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