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SSTS3060CT

Silikron Semiconductor

Schottky Barrier Rectifier

SSTS3060CT/CTF Main Product Characteristics: IF VRRM Tj(max) Vf(max) 2×15A 60V 150℃ 0.6V Features and Benefits:  Hi...


Silikron Semiconductor

SSTS3060CT

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Description
SSTS3060CT/CTF Main Product Characteristics: IF VRRM Tj(max) Vf(max) 2×15A 60V 150℃ 0.6V Features and Benefits:  High Junction Temperature  High ESD Protection  High Forward & Reverse Surge capability TO220 SSTS3060CT TO220F SSTS3060CTF Schematic Diagram Description: Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC convertors; this product special design for high forward and reverse surge capability Absolute Rating: Symbol Characterizes VRRM Peak Repetitive Reverse Voltage VR(RMS) IF(AV) RMS Reverse Voltage Average Forward Current Per diode Per device IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal) IRRM Peak Repetitive Reverse Surge Current(Tp=2us) TJ Maximum operation Junction Temperature Range Tstg Storage Temperature Range Value 60 42 15 30 200 0.5 -55~150 -55~150 Unit V V A A A A ℃ ℃ Thermal Resistance Symbol Characterizes RθJC Maximum Thermal Resistance Junction To RθJC Case(per leg) TO220 TO220F Value 2 4 Unit ℃/W ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Characterizes Min Typ Max Unit VR Reverse Breakdown Voltage 60 V VF Forward Voltage Drop 0.57 0.6 0.57 V IR Leakage Current 0.1 mA 20 Test Condition IR=0.5mA IF=15A, TJ=25℃ IF=15A, TJ=125℃ VR=60V, TJ=25℃ VR=60V, TJ=125℃ ©Silikron Semiconductor CO., LTD. 2012.3.26 www.silikron.com Version: 2.1 page 1of6 I-V Curves: SSTS3060CT/CTF Figure 1:Typical Forward Characteristic...




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