SSU04N65

SSU04N65 Elektronische Bauelemente 4A , 650V , RDS(ON) 2.6Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSU04N65 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . TO-263   FEATURES       Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available  Drain Date Code Millimeter Min. Max. 4.00 4.85 0.68 1.00 0.00 0.30 0.36 0.53 1.50 REF 2.29 2.79 9.60 10.45 Millimeter Min. Max. 1.10 1.45 1.34 REF 8.0 9.15 2.54 REF 14.6 15.85 1.27 REF MARKING 4N65   Gate REF. A b L4 C L3 L1 E REF. c2 b2 D e L L2 PACKAGE INFORMATION Package TO-263 MPQ 0.8K Leader Size 13 inch  Source ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V 1 Pulsed Drain Current 2 Symbol VDS VGS TC=25°C TC=100°C ID IDM TC=25°C TA=25°C PD EAS IAS TJ, TSTG Rating 650 ±30 4 2.6 8 112 2 2.36 2 -55~150 Unit V V A A A W mJ A °C Total Power Dissipation 4 Single Pulse Avalanche Energy 3 Single Pulse Avalanche Current Operating Junction and Storage Temperature Range Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient (PCB 1 mount) Maximum Thermal Resistance Junction-Case 1 RθJA RθJC 62 1.12 °C / ...