Advanced Power MOSFET
SSR/U2N60A
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacit...
Advanced Power
MOSFET
SSR/U2N60A
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 Ω (Typ.)
BVDSS = 600 V RDS(on) = 5 Ω ID = 1.8 A
D-PAK I-PAK
2
11
3
2 3
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source
Voltage
Continuous Drain Current (TC=25 oC ) Continuous Drain Current (TC=100 oC)
Drain Current-Pulsed
O1
Gate-to-Source
Voltage
Single Pulsed Avalanche Energy Avalanche Current
Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25oC )* Total Power Dissipation (TC=25 oC ) Linear Derating Factor
O2 O1 O1 O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8”from case for 5-seconds
1. Gate 2. Drain 3. Source
Value 600 1.8 1.1
6 +_ 30 141 1.8 4.4 3.0 2.5 44 0.35
- 55 to +150
300
Units V
A
A V mJ A mJ V/ns W W W/ oC
oC
Thermal Resistance
Symbol
Characteristic
Typ.
R θJC R θJA R θJA
Junction-to-Case Junction-to-Ambient * Junction-to-Ambient
----
* When mounted on the minimum pad size recommended (PCB Mount).
Max. 2.87 50 110
Units oC /W
Rev. B
©1999 Fairchild Semiconductor Corporation
SSR/U2N60A
N-CHANNEL POWER
MOSFET
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol BVDSS
∆BV/∆TJ VGS(th)
IGSS
IDSS
RDS(on)
gfs Ciss Coss Crss...