Elektronische Bauelemente
SSU50N10
54A , 100V , RDS(ON) 22mΩ N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product...
Elektronische Bauelemente
SSU50N10
54A , 100V , RDS(ON) 22mΩ N-Ch Enhancement Mode Power
MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
The SSU50N10 is the highest performance trench N-ch
MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications .
FEATURES
Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS and 100% Rg Guaranteed Green Device Available
TO-263
MARKING
50N10
Date Code
PACKAGE INFORMATION
Package
MPQ
TO-263
0.8K
Leader Size 13 inch
1
Gate
2
Drain
3
Source
REF.
A b L4 c L3 L1 E
Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.00 0.30 0.36 0.5
1.50 REF 2.29 2.79 9.80 10.4
REF.
c2 b2 D e L θ L2
Millimeter Min. Max.
1.17 1.45 1.1 1.47 8.5 9.0
2.54 REF 14.6 15.8
0° 8° 1.27 REF
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source
Voltage
VDS 100
Gate-Source
Voltage
VGS ±20
Continuous Drain Current 1 Pulsed Drain Current 2
VGS=10V, TC=25°C VGS=10V, TC=100°C
ID IDM
54 38 160
Total Power Dissipation 4 Single Pulse Avalanche Energy 3
TC=25°C TA=25°C
PD EAS
104 3.13
98
Single Pulse Avalanche Current
IAS 41
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~150
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient (PCB mount) 1 Maximum Thermal Resistance Junction-Case 1
RθJA RθJC
40 1.2
Unit...
