DC-4 GHz High Isolation GaAs MMIC SPDT Switch
Product Description
Stanford Microdevices’ SSW-208 is a high perfomance Gallium Arsenide Field Effect Transistor MMIC sw...
Description
Product Description
Stanford Microdevices’ SSW-208 is a high perfomance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable small outline plastic package. This single-pole, double-throw, non-reflective switch consumes less than 50uA and operates at -5V and 0V for control bias. Its high isolation and low insertion loss makes it ideal for T/R switching in analog and digital wireless communication systems. The die is fabricated using 0.5 micron FET process with gold metallization and silicon nitride passivation to achieve excellent performance and reliability.
SSW-208
DC-4 GHz, High Isolation GaAs MMIC SPDT Switch
Isolation vs. Frequency VControl = -5 V
-20 -30 -40
dB
Product Features High Isolation: 22dB at 2GHz Low DC Power Consumption Low Insertion Loss: 0.9dB at 2GHz Broad Performance - True DC Operation Low Cost Small Outline Plastic Package Applications Analog/Digital Wireless System Spread Spectrum GPS Switches
-50 -60 -70 D C 1 2 3 4
GHz
Electrical Specifications at Ta = 25C
Sym bol P a r a m e t e r s : T e s t C o n d it io n s U n it s M in . Ty p . M ax.
In s
In s e rtio n L o s s
f = 0 .0 5 -1 .0 G H z f = 1 .0 0 -2 .0 G H z f = 2 .0 0 -4 .0 G H z f = 0 .0 5 -1 .0 G H z f = 1 .0 0 -2 .0 G H z f = 2 .0 0 -4 .0 G H z f = 0 .0 5 -1 .0 G H z f = 1 .0 0 -2 .0 G H z f = 2 .0 0 -4 .0 G H z V = -5 V V = -8 V V = -5 V V = -8 V
dB dB dB dB dB dB 25 20
0 .8 0 .9 1 .4 40 30 25 1 .1 5 1 .2 5 1 .5 0
1 .3 1 .4
I...
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