ST04N20D
N Channel Enhancement Mode MOSFET
4.0A
DESCRIPTION
ST04N20D is the N-Channel logic enhancement mode power field...
ST04N20D
N Channel Enhancement Mode
MOSFET
4.0A
DESCRIPTION
ST04N20D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low
voltage application such as power management and other battery powered circuits where high-side switching.
PIN CONFIGURATION TO-252
FEATURE
l 200V/4.0A, RDS(ON) = 400m @VGS = 10V
l Super high density cell design for extremely low RDS(ON)
l Exceptional on-resistance and maximum DC current capability
l TO-252 package design
PART MARKING
P:Perduce Code W:Wafer Code Y:Year Code A:Product Code
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2008, Stanson Corp.
ST04N20D 2014. V1
ST04N20D
N Channel Enhancement Mode
MOSFET
4.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parame...
