ST2300SRG

ST2300SRG N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION SOT-23 3 D G 1 S 2 1.Gate 2.Source 3.Drain FEATURE 20V/6.0A, RDS(ON) = 35mΩ (Typ.) @VGS = 10V 20V/5.0A, RDS(ON) = 48mΩ @VGS = 4.5V 20V/4.5A, RDS(ON) = 90mΩ @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability SOT-23 package design PART MARKING SOT-23 3 42YA 12 Y: Year Code A: Process Code ORDERING INFORMATION Part Number Package ST2300SRG SOT-23 ...