ST2305A

P Channel Enhancement Mode MOSFET ST2305A -3.5A DESCRIPTION ST2305A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L FEATURE z 3 D G 1 1.Gate 2.Source S 2 3.Drain z z z z z -15V/-3.5A, RDS(ON) = 45m-ohm (Typ.) @VGS = -4.5V -15V/-3.0A, RDS(ON) = 55m-ohm @VGS = -2.5V -15V/-2.0A, RDS(ON)= 90m-ohm @VGS=-1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design PART MARKING SOT-23-3L www.DataSheet4U.com 3 05YA 1 Y: Year Code 2 A: Process Code ORDERING INFORMATION Part Number ST2305AS23RG Package SOT-23-3L Part Marking 05YA ※ Process Code : A ~ Z ; a ~ z ※ ST2305AS23RG S : SOT-23-3L ; R : Tape Reel ; G : Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2305A 2005. V1 P Channel Enhancement Mode MOSFET ST2305A -3.5A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentTJ=150℃) Pulsed Drain Current Con...