DatasheetsPDF.com

ST2310FX

ST Microelectronics

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

® ST2310FX HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s NEW SERIES, ENHANCED PERFORMANCE FULLY INSUL...


ST Microelectronics

ST2310FX

File DownloadDownload ST2310FX Datasheet


Description
® ST2310FX HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY ( > 1500 V) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS s APPLICATIONS: HORIZONTAL DEFLECTION FOR MONITORS 17" AND HIGH END TVS DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ISOWATT218FX INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB P tot V isol T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Total Dissipation at T C = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature Value 1500 600 7 12 25 7 65 2500 -65 to 150 150 Unit V V V A A A W V o o C C 1/6 October 2003 ST2310FX THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.9 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 1500 V V CE = 1500 V V EB = 7 V I C = 100 mA L = 25 mH 600 T J = 125 o C Min. Typ. Max. 1 2 1 Unit mA mA mA V V CEO(sus) ∗ Collector-Em...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)