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ST2341A Datasheet

Part Number ST2341A
Manufacturers Stanson
Logo Stanson
Description P-Channel Enhancement Mode MOSFET
Datasheet ST2341A DatasheetST2341A Datasheet (PDF)

ST2341A P Channel Enhancement Mode MOSFET -6.0A DESCRIPTION ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The produc.

  ST2341A   ST2341A






Part Number ST2341SRG
Manufacturers Stanson Technology
Logo Stanson Technology
Description P-Channel Enhancement Mode MOSFET
Datasheet ST2341A DatasheetST2341SRG Datasheet (PDF)

ST2341SRG P Channel Enhancement Mode MOSFET -3.2A DESCRIPTION ST2341SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The pro.

  ST2341A   ST2341A







Part Number ST2341S23RG
Manufacturers Stanson Technology
Logo Stanson Technology
Description P-Channel Enhancement Mode MOSFET
Datasheet ST2341A DatasheetST2341S23RG Datasheet (PDF)

ST2341S23RG P Channel Enhancement Mode MOSFET -5.3A DESCRIPTION ST2341S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. T.

  ST2341A   ST2341A







Part Number ST2341
Manufacturers Stanson
Logo Stanson
Description P-Channel Enhancement Mode MOSFET
Datasheet ST2341A DatasheetST2341 Datasheet (PDF)

P Channel Enhancement Mode MOSFET ST2341 -3.5A DESCRIPTION ST2341 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product.

  ST2341A   ST2341A







P-Channel Enhancement Mode MOSFET

ST2341A P Channel Enhancement Mode MOSFET -6.0A DESCRIPTION ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L FEATURE -30V/-6.0A, RDS(ON) = 20m-ohm (Typ.) @VGS = -10V -30V/-3.8A, RDS(ON) = 28m-ohm @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design 3.Drain 3 D G 1 1.Gate 2.Source S 2 http://www.DataSheet4U.net/ PART MARKING SOT-23-3L 3 41YA 1 Y: Year Code 2 A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2341A 2010. Rev.1 datasheet pdf - http://www.DataSheet4U.net/ ST2341A P Channel Enhancement Mode MOSFET -6.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentTJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature http://www.DataSheet4U.net/ Symbol VDSS VGSS TA=25℃ TA=70℃ ID IDM IS PD TJ TSTG RθJ.


2013-01-06 : PIC16F1512    PIC16F1513    ST2341    ST2341A    ST2342    ST2349    ST2349A    BA524    LM48511   


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