ST2SC1359

www.DataSheet4U.com ST 2SC1359 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE=6V, IC=1mA Collector Base Breakdown Voltage at IC=100µA Collector Emitter Breakdown Voltage at IC=10mA Emitter Base Breakdown Voltage at IE=10µA Collector Cutoff Current at VCB=30V Emitter Cutoff Current at VEB=3V Collector Saturation Voltage at IC=100mA, IB=10mA Gain Bandwidth Product at VCE=6V, IC=10mA Output Capacitance at VCB=6V, f=1MHz Noise Figure at VCE=6V, IE=0.5mA, f=1KHz, RS=500Ωat Symbol hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) fT COB NF Min. 150 30 20 5 Typ. 125 1.8 4 Max. 650 0.1 0.1 0.3 Unit V V V µA µA V MHz pF dB Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 30 20 5 100 250 150 -55 to +150 Unit V V V mA mW O O C C SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 02/12/2005 www.DataSheet4U.com ST 2SC1359 Total power dissipation vs. ambient temperature 300 ...