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ST 2SC1383 / 2SC1384
NPN Silicon Epitaxial Planar Transistor For low-frequency power amplification ...
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ST 2SC1383 / 2SC1384
NPN Silicon Epitaxial Planar Transistor For low-frequency power amplification and driver Amplification. Complementary to 2SA683 to and 2SA684. On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 oC) Symbol Collector Base
Voltage 2SC1383 2SC1384 Collector Emitter
Voltage 2SC1383 2SC1384 Emitter Base
Voltage Peak Collector Current Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCBO VCEO VCEO VEBO ICP IC Ptot Tj TS Value 30 60 25 50 5 1.5 1 1 150 -55 to +150 Unit V V V V V A A W ℃ ℃
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002
www.DataSheet4U.com
ST 2SC1383 / 2SC1384
Characteristics at Tamb=25 OC Symbol DC Current Gain at IC=500mA, VCE=10V Q R S at IC=1A, VCE=5V Collector Cutoff Current at VCB=20V Collector Base
Voltage at IC=10μA Collector Emitter
Voltage at IC=2mA IC=2mA Emitter Base
Voltage at IE=10μA Collector Saturation
Voltage at IC=500mA, IB=50mA Base Saturation
Voltage at IC=500mA, IB=50mA Gain Bandwidth Product at VCB=10V,IE=-50mA,f=200MHz Output Capacitance at VCB=10V,f=1MHz COB 11 20 pF fT 200 MHz VBE (sat) 0.85 1.2 V VCE(sat) 0.2 0.4 V VEBO 5 V 2SC1383 2SC1384 VCEO VCEO 25 50 V V 2SC1383 2SC1384 VCBO VCBO 30 60 V V hFE hFE hFE hFE ICBO 85 120 ...