ST2SC1923

www.DataSheet4U.com ST 2SC1923 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications FM, RF, MIX, IF amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25oC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB Ptot Tj TS Value 40 20 4 20 4 100 125 -55 to +125 Unit V V V mA mA mW O O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 www.DataSheet4U.com ST 2SC1923 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=6V, IC=1mA Current Gain Group R O Y Collector Cutoff Current at VCB=18V Emitter Cutoff Current at VEB=4V Reverse Transfer Capacitance at VCE=6V, f=1MHz Gain Bandwidth Product at VCE=6V, IC=1mA Collector-Base Time Constant at VCE=6V, IE=-1mA, f=30MHz Noise Figure at VCE=6V, IE=-1mA, f=100MHz Power Gain at VCE=6V, IE=-1mA, f=100MHz Gpe 15 18 dB NF 2.5 4 dB Cr.rbb’ 30 ps fT 550 MHz Cre 0.70 pF IEBO 0.5 μA ICBO 0.5 μA hFE hFE hFE 40 70 100 80 140 200 Min. Typ. Max. Unit SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Hold...