ST2SC2362

www.DataSheet4U.com ST 2SC2362 NPN Silicon Epitaxial Planar Transistor High -Voltage Low-Noise Amp applications The transistor is subdivided into three groups F, G and H, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC ICP Ptot Tj TS Value 120 100 5 50 100 400 125 -55 to +125 Unit V V V mA mA mW O O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 17/5/2004 www.DataSheet4U.com ST 2SC2362 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=6V, IC=1mA Current Gain Group F G H Collector Base Breakdown Voltage at IC=10μA Collector Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=10μA Collector Cutoff Current atVCB=80V Emitter Cutoff Current atVEB=4V Collector Emitter Saturation Voltage at IC=10mA, IB=1mA Gain Bandwidth Product at VCE=6V, IC=1mA Output Capacitance at VCB=10V, f=1MHz Noise Level at VCC=30V, IC=1mA at Rg=56KΩ,VG=77dB/1kHz Noise Peak Level at VCC=30V, IC=1mA at Rg=56KΩ,VG=77dB/1kHz CNO(peak) 200 mV CNO(ave) 35 mV COB 1.8 pF fT 130 MHz VCE(sat) 0.5 V IEBO 1 μA ICBO 1 μA V(BR)EBO 5 V V(BR)CEO 100 V V(BR)CBO 120 V hFE hFE hFE 160 280 480 320 560 960 ...