Transistor. ST2SC2412 Datasheet

ST2SC2412 Datasheet PDF

Part ST2SC2412
Description NPN Silicon Epitaxial Planar Transistor
Feature www.DataSheet4U.com ST 2SC2412 NPN Silicon Epitaxial Planar Transistor for general purpose applicat.
Manufacture SEMTECH ELECTRONICS
Datasheet
Download ST2SC2412 Datasheet

www.DataSheet4U.com ST 2SC2412 NPN Silicon Epitaxial Planar ST2SC2412 Datasheet





ST2SC2412
ST 2SC2412
www.DataSheet4U.com
NPN Silicon Epitaxial Planar Transistor
for general purpose applications.
The transistor is subdivided into three groups Q, R
and S. according to its DC current gain.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25oC)
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
TS
Value
60
50
7
150
200
150
-55 to +150
Unit
V
V
V
mA
mW
OC
OC
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/06/2003



ST2SC2412
ST 2SC2412
www.DataSheet4U.com
Characteristics at Tamb=25 OC
DC Current Gain
at VCE=6V, IC=1mA
Collector Base Breakdown Voltage
at IC=50μA
Collector Emitter Breakdown Voltage
at IC=1mA
Emitter Base Breakdown Voltage
at IE=50μA
Collector Cutoff Current
at VCB=60V
Emitter Cutoff Current
at VEB=7V
Collector Saturation Voltage
at IC=50mA, IB=5mA
Gain Bandwidth Product
at VCE=12V, -IE=2mA, f=100MHz
Output Capacitance
at VCE=12V, f=1MHz
Symbol
Min.
Q hFE
R hFE
S hFE
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
fT
COB
120
180
270
60
50
7
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
180
2
Max.
270
390
560
-
-
-
0.1
0.1
0.4
-
3.5
Unit
-
-
-
V
V
V
μA
μA
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/06/2003




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