ST2SC2655

www.DataSheet4U.com ST 2SC2655 (TO-92) NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta=25oC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC Ptot Tj Ts Value 50 50 5 2 900 150 -55 to +150 Unit V V V A mW O O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 www.DataSheet4U.com ST 2SC2655 (TO-92) Characteristics at Tamb=25℃ Symbol DC Current Gain at VCE=2V, IC=0.5A at VCE=2V, IC=1.5A Collector Base Breakdown Voltage at IC=1mA Collector Emitter Breakdown Voltage at IC=10mA Emitter Base Breakdown Voltage at IE=1mA Collector Cutoff Current at VCB=50V Emitter Cutoff Current at VEB=5V Collector Saturation Voltage at IC=1A, IB=50mA Base Saturation Voltage at IC=1A, IB=50mA Gain Bandwidth Product at VCE=2V, IC=0.5A Output Capacitance at VCB=10V, f=1MHz COB 40 pF fT 100 MHz VBE(sat) 1.2 V VCE(sat) 0.5 V IEBO 1 μA ICBO 1 μA V(BR)EBO 5 V V(BR)CEO 50 V V(BR)CBO 50 V O Y hFE hFE hFE 70 120 40 140 240 Min. Typ. Max. Unit SEMTECH ELECTRONICS LTD. (...