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ST2SC2784 Datasheet

Part Number ST2SC2784
Manufacturers SEMTECH ELECTRONICS
Logo SEMTECH ELECTRONICS
Description NPN Silicon Epitaxial Planar Transistor
Datasheet ST2SC2784 DatasheetST2SC2784 Datasheet (PDF)

www.DataSheet4U.com ST 2SC2784 NPN Silicon Epitaxial Planar Transistor Audio frequency low noise amplifier. The transistor is subdivided into four groups, P, F, E and U according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipa.

  ST2SC2784   ST2SC2784






Part Number ST2SC2787
Manufacturers SEMTECH ELECTRONICS
Logo SEMTECH ELECTRONICS
Description NPN Silicon Epitaxial Planar Transistor
Datasheet ST2SC2784 DatasheetST2SC2787 Datasheet (PDF)

www.DataSheet4U.com ST 2SC2787 NPN Silicon Epitaxial Planar Transistor for FM RF amp, mixer, osc, converter and IF amplifier. The transistor is subdivided into three groups M, L, and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Features 1) Small output capacitance 2) Low noise figure TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Symbol Collector Base Voltage Collector Emitter Vo.

  ST2SC2784   ST2SC2784







Part Number ST2SC2786
Manufacturers SEMTECH ELECTRONICS
Logo SEMTECH ELECTRONICS
Description NPN Silicon Epitaxial Planar Transistor
Datasheet ST2SC2784 DatasheetST2SC2786 Datasheet (PDF)

www.DataSheet4U.com ST 2SC2786 NPN Silicon Epitaxial Planar Transistor for FM RF amplifier and local oscillator of FM tuner. The transistor is subdivided into three groups M, L, and K, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Features 1) High gain bandwidth product 2) Small output capacitance 3) Low noise figure TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Symbol Collector Ba.

  ST2SC2784   ST2SC2784







Part Number ST2SC2785
Manufacturers SEMTECH ELECTRONICS
Logo SEMTECH ELECTRONICS
Description NPN Silicon Epitaxial Planar Transistor
Datasheet ST2SC2784 DatasheetST2SC2785 Datasheet (PDF)

www.DataSheet4U.com ST 2SC2785 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation J.

  ST2SC2784   ST2SC2784







NPN Silicon Epitaxial Planar Transistor

www.DataSheet4U.com ST 2SC2784 NPN Silicon Epitaxial Planar Transistor Audio frequency low noise amplifier. The transistor is subdivided into four groups, P, F, E and U according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB Ptot Tj TS Value 120 120 5 50 10 300 150 -55 to +150 Unit V V V mA mA mW O O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 www.DataSheet4U.com ST 2SC2784 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=6V, IC=1mA Current Gain Group P F E U at VCE=6V, IC=0.1mA Collector Cutoff Current at VCB=120V Emitter Cutoff Current at VEB=5V Collector Cutoff Current at VCE=100V Gain Bandwidth Product at VCE=6V, IE=1mA Noise Voltage Output Capacitance at VCB=30V, f=1MHz Base Emitter Voltage at VCE=6V, IC=1mA Collector Saturation Voltage at IC=10mA, IB=1mA VCE(sat) 0.07 0.3 V VBE 0.55 0.59 0.65 V COB 1.6 2.5 pF fT NV 50 110 25 40 MHz mV ICEO 1 μA IEBO 0.05 μA ICBO 0.05 μA hFE hFE hFE hFE hFE 200 300 400 600 150 580 400 600 800 1200 Min. Typ. Max. Unit SEMTECH ELECTRONICS LTD. (Subsidiar.


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