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P Channel Enhancement Mode MOSFET -3.4A DESCRIPTION
ST3413
The ST3413 is the P-Channel logic enha...
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P Channel Enhancement Mode
MOSFET -3.4A DESCRIPTION
ST3413
The ST3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low
voltage application such as cellular phone and notebook computer power management and other batter powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION SOT-23-3L 3
FEATURE z -20V/-3.4A, RDS(ON) = 95m-ohm @VGS = -4.5V z -20V/-2.4A, RDS(ON) = 120m-ohm @VGS = -2.5V z - 20V/-1.7A, RDS(ON) = 145m-ohm @VGS = -1.8V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-23-3L package design
D G
1
1.Gate 2.Source
S
2
3.Drain
3
13YA
1 2
A: Process Code 1A: Part Marking Y: Year Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
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P Channel Enhancement Mode
MOSFET -3.4A
ST3413
ABSOULTE MAXIMUM RATINGS (Ta = 25¢J Unless otherwise noted ) Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (TJ=150¢J ) TA=25¢J TA=70¢J Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction ...