ST36015

ST36015 Datasheet 20 W, 28 V, 0.7 to 3.6 GHz RF power LDMOS transistor 1 3 2 E2 Pin connection Pin Connection 1 Drain 2 Source (bottom side) 3 Gate Features Order code Frequency VDD POUT Gain Efficiency ST36015 3450 MHz 28 V 20 W 12.4 dB 42% High efficiency and linear gain operations Integrated ESD protection Internal input matching for ease of use Large positive and negative gate-source voltage range for improved class C operation In compliance with the European directive 2002/95/EC Applications Telecom and wideband communication Industrial, scientific and medical (ISM) Description The ST36015 is a 20 W, 28 V, internally matched LDMOS transistor designed for cellular base stations and ISM applications in the frequency range from 0.7 to 3.6 GHz. Product status link ST36015 Product summary Order code ST36015 Marking ST36015 Package E2 Packing Tape and reel 13" Base/bulk quantity 300/300 DS12760 - Rev 4 - September 2021 For further information contact your local STMicroelectronics sales office. www.st.com ST36015 Electrical ratings 1 Electrical ratings Symbol VDS VGS VDD TSTG TJ Table 1. Absolute maximum ratings (TC = 25 °C) Parameter Drain-source voltage Gate-source voltage Drain supply voltage Storage temperature range Maximum junction temperature Table 2. Thermal data Symbol Parameter RthJC(1) Thermal resistance, junction-to-case 1. TC = 80 °C, TJ = 200 °C, DC test. Symbol HBM CDM Table 3. ESD protection Param...