Semiconductor
ST5870
Photo Transistor
Features
• • • • • Lensed for high sensitivity φ5mm(T-13/4) all plastic mold typ...
Semiconductor
ST5870
Photo Transistor
Features
Lensed for high sensitivity φ5mm(T-13/4) all plastic mold type High reliability and stable characteristics Visible light cut-off type With base terminal
Outline Dimensions
unit : mm
PIN Connections 1. Base 2.Collector 3.Emitter
KPT-0004-000
1
ST5870
Absolute maximum ratings
Characteristic
Collector-Emitter
Voltage Emitter-Collector
Voltage Collector-Base
Voltage Emitter-Base
Voltage Collector Current Collector Power Dissipation Operating Temperature Storage Temperature *1Soldering Temperature
Symbol
VCEO VECO VCBO VEBO IC PD Topr Tstg Tsol
Ratings
30 6 30 6 20 75 -25 -30 260 85 100 for 5 seconds
Unit
V V V V mA mW
*1. Keep the distance more than 2.0mm from PCB to the bottom of LED package
Electrical Characteristics
Characteristic
Current Dark Current
Symbol
ICEO ICEL
Test Condition
VCEO=10V, Ee=0 VCE=5V, Ee IC=0.5 , Ee 1mW/ 1mW/
Min
-
Typ
0.05 5 0.18 10 10
Max
0.5 -
Unit
uA mA V us nm
* Light Current
Current-Emitter Saturation
Voltage Switching Time Rise Time Fall Time
3
VCE(sat)
tr tf
VCC=2V, IC=1mA R1=100 -
Spectral Sensitivity Peak Sensitivity Wavelength
Half angle
P
700 ~ 1000 880 ±35 -
-
nm deg
θ1/2 30%
*1. Tolerance =
KPT-0004-000
2
Characteristic Diagrams
Fig. 1 ICEL - Ee Fig. 2 ICEL - VCE
ST5870
Light Current ICEL [mA]
Irradiance Ee [
/
]
Light Current ICEL [mA]
Collector-Emitter
Voltage VCE [V]
Fig. 3 PD – Ta
Fig.4 ICEO – Ta
Power Dissipation PD [mW]
Ambient Temperatu...