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STA-5063Z Datasheet

Part Number STA-5063Z
Manufacturers RF Micro Devices
Logo RF Micro Devices
Description general purpose class A linear amplifier
Datasheet STA-5063Z DatasheetSTA-5063Z Datasheet (PDF)

STA-5063Z 3.3GHz to 6.2GHz General Purpose 3.3V 15 dBm Amplifier STA-5063Z 3.3GHz to 6.2GHz GENERAL PURPOSE 3.3V 15dBm AMPLIFIER Package: SOT-363, 2.0mmx2.1mm Product Description RFMD’s STA-5063Z is a general purpose class A linear amplifier which utilizes InGaP GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface- mountable plastic package. This product is specifically designed as a driver amplifier for WLAN 802.11a and 5.8GHz ISM band and 3.3GHz to 3.8GHz.

  STA-5063Z   STA-5063Z






Part Number STA-5063
Manufacturers Sirenza Microdevices
Logo Sirenza Microdevices
Description General Purpose 3.3V 15dBm Amplifier
Datasheet STA-5063Z DatasheetSTA-5063 Datasheet (PDF)

Product Description Sirenza Microdevices’ STA-5063 is a general purpose class A linear amplifier which utilizes InGaP GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This product is specifically designed as a driver amplifier for WLAN 802.11a and 5.8GHz ISM band and 3.3-3.8GHz fixed wireless applications. It can run from a fixed 3.0-3.6V supply with its on chip active bias network which includes a power up and down control. On-chip i.

  STA-5063Z   STA-5063Z







general purpose class A linear amplifier

STA-5063Z 3.3GHz to 6.2GHz General Purpose 3.3V 15 dBm Amplifier STA-5063Z 3.3GHz to 6.2GHz GENERAL PURPOSE 3.3V 15dBm AMPLIFIER Package: SOT-363, 2.0mmx2.1mm Product Description RFMD’s STA-5063Z is a general purpose class A linear amplifier which utilizes InGaP GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface- mountable plastic package. This product is specifically designed as a driver amplifier for WLAN 802.11a and 5.8GHz ISM band and 3.3GHz to 3.8GHz fixed wireless applications. It can run from a fixed 3.0V to 3.6V supply with its on chip active bias network which includes a power up and down control. On-chip impedance matching circuitry provides a 50 nominal RF input and output impedance. Its high linearity makes it an ideal choice for multicarrier and digital applica- Optimum Technology Matching® Applied GaAs HBT GaAs MESFET  InGaP HBT tions. Housed in an industry standard SOT-363 package, it has no blind solder joints and designed for low cost. This product is offered in a RoHS Compliant and Green package with matte tin finish, designated by the “Z” package suffix. SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT BiFET HBT LDMOS Features  Linear Class A Performance  P1dB=17.5dBm at 3.5GHz  P1dB=15dBm at 5.9GHz  IP3=30dBm at 3.5GHz  IP3=27dBm at 5.9GHz  Power Up/Down Control<1uS  Active Bias Controlled  Robust Class 1C ESD Rating Applications  Driver Stage for 802.11a Access Po.


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