Semiconductor
STA3350F
PNP Silicon Transistor
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Applications
• Power amplifier application • High c...
Semiconductor
STA3350F
PNP Silicon Transistor
www.datasheet4u.com
Applications
Power amplifier application High current switching application
Features
Low saturation
voltage: VCE(sat)=-0.15V Typ. @ IC=-1A, IB=-50mA Large collector current capacity: IC=-3A Small and compact SMD type package Complementary pair with STC4350F
Ordering Information
Type NO. STA3350F Marking HW7 Package Code SOT-89
Outline Dimensions
3.70~4.30 1.15 Typ. 2.40~2.70 1.20 Max.
unit : mm
3
4.40~4.70 1.87 Max.
4
2
0.58 Max.
1
0.48 Max.
1.40~1.70
1.15 Typ.
PIN Connections 1. Base 2,4. Collector 3. Emitter
0.10 Max.
KSD-T5B006-000
0.46 Max.
1
STA3350F
Absolute Maximum Ratings
Characteristic
Collector-base
voltage
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Symbol
VCBO VCEO VEBO IC PC PC※ TJ Tstg
2
Rating
-50 -50 -6 -3 0.5 1 150 -55~150
[Ta=25℃] Unit
V V V A W W °C °C
Collector-emitter
voltage Emitter-base
voltage Collector current Collector Power dissipation Junction temperature Storage temperature range
※ Device mounted on ceramic substrate (250mm ⅹ0.8t)
Electrical Characteristics
Characteristic
Collector-emitter breakdown
voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation
voltage Base-emitter saturation
voltage Transition frequency Collector output capacitance Turn-on Time Switching Time Storage Time Fall Time
Symbol
BVCEO ICBO IEBO hFE hFE VCE(sat) VBE(sat) fT Cob ton tstg tf
Test Condition
IC=-1mA, IB=0 VCB=-50V, IE=0 VEB=-6V, IC=0 VCE=-...