STA3350PI

STA3350PI PNP Silicon Transistor Applications Power amplifier application High current switching application Features Low saturation voltage : VCE(sat)=-0.15V Typ. @ IC=-1A, IB=-50mA Large collector current capacity: IC=-3A TO-220F-3L DIP type package Ordering Information Type NO. Marking Package Code STA3350PI STA3350 TO-220F-3L PIN Connection TO-220F-3L Absolute Maximum Ratings Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power dissipation(TC=25°C) Junction temperature Storage temperature range * : Single pulse, tp= 300 ㎲ Symbol VCBO VCEO VEBO IC ICP* PC TJ Tstg Rating -50 -50 -6 -3 -6 10 150 -55~150 [Ta=25℃] Unit V V V A(DC) A(Pulse) W °C °C Electrical Characteristics Characteristic Symbol Test Condition [Ta=25℃] Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCEO IC=-1mA, IB=0 -50 - - V Collector cut-off current ICBO VCB=-50V, IE=0 - - -1 μA Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage IEBO hFE hFE VCE(sat) VBE(sat) VEB=-6V, IC=0 VCE=-2V, IC=-0.5A* VCE=-2V, IC=-2A* IC=-1A, IB=-0.05A* IC=-2A, IB=-0.1A* - - -1 120 - 240 40 - - - - -0.35 - -0.97 -1.2 μA V V Transition frequency Collector output capacitance fT VCE=-10V, IC=-0.05A Cob VCB=-10V, IE=0, f=1MHz - 250 - MHz - 28 - pF Switching Time Turn-on Time Storage Time Fall Time *: Pulse test : tP≤300µs, Duty cycle≤2% ton tstg tf < ...