Applications
• Power amplifier application • High current switching application
Features
• Low saturation voltage: VCE(s...
Applications
Power amplifier application High current switching application
Features
Low saturation
voltage: VCE(sat)=-0.15V Typ. @ IC=-1A, IB=-50mA
Large collector current capacity: IC=-3A Small and compact SMD type package “Green” device and RoHS compliant device Available in full lead (Pb)-free device
STA3350Q
PNP Silicon Transistor
PIN Connection
SOT-223
Ordering Information
Type NO.
Marking
Package Code
STA3350Q
STA3350 YWW
STA3350: DEVICE CODE, YWW(Y : Year code, WW : Weekly code)
SOT-223
Absolute Maximum Ratings
Characteristic
Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage
Collector current
Collector Power dissipation
Junction temperature Storage temperature range * : Single pulse, tp= 300 ㎲ ** : When mounted on copper substrate(250 ㎟×0.8t)
Characteristic Thermal resistance Junction-ambient
Symbol
VCBO VCEO VEBO
IC ICP* PC PC**
TJ Tstg
Symbol Rth(J-a)
Rating
-50 -50 -6 -3 -6 1.1 1.5 150 -55~150
[Ta=25℃] Unit
V V V A(DC) A(Pulse) W W °C °C
Typ. -
Max 113.6 83.3**
Unit ℃/W ℃/W
KSD-T5A008-000
1
STA3350Q
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-emitter breakdown
voltage
BVCEO
IC=-1mA, IB=0
[Ta=25℃] Min. Typ. Max. Unit
-50 - - V
Collector cut-off current
ICBO
VCB=-50V, IE=0
- - -1 μA
Emitter cut-off current
IEBO
VEB=-6V, IC=0
- - -1 μA
DC current gain Collector-emitter saturation
voltage
hFE VCE=-2V, IC=-0.5A*
hFE VCE=-2V, IC=-2A*
VCE(sat)
IC=-1A, IB=-0.05A*
120 -
...