Power Transistor Array
Power Transistor Array STA335A
Absolute Maximum Ratings (Ta=25ºC)
Symbol
Ratings
Unit
VCBO
35±5
V
VCEO
35±5
V
...
Description
Power Transistor Array STA335A
Absolute Maximum Ratings (Ta=25ºC)
Symbol
Ratings
Unit
VCBO
35±5
V
VCEO
35±5
V
VEBO
6
V
IC
3
A
IB
1
A
PT
2.5 (Ta=25ºC)
W
12 (Tc=25ºC)
W
Tj
150
ºC
Tstg
–55 to +150
ºC
Electrical Characteristics
Symbol ICBO IEBO VCEO hFE VCE (sat) Es/b
Test Conditions VCB = 30V VEB = 6V IC = 25mA
VCE = 4V, IC = 0.5A IC = 1A, IB = 5mA L = 10mH, single pulse
Ratings 10max 10max 35±5 500min 0.5max 150min
(Ta=25ºC) Unit µA µA V
V mJ
Typical Switching Characteristics
VCC RL (V) (Ω)
12 12
IC VBB1 VBB2 IB1 IB2 ton tstg tf (A) (V) (V) (mA) (mA) (µs) (µs) (µs)
1 10 –5 5 5 1.3 4.7 1.2
External Dimensions STA3 (LF400A)
20.2±0.2
b a
11.3±0.2 2.3±0.2
9.0±0.2
4.7±0.5
0.5±0.15 1.0±0.25 7 2.54= 17.78±0.25
C1.5±0.5
(2.54)
12 3456 7 8 CBEE BC
a) Part No. b) Lot No.
(Unit: mm)
0.5±0.15 1.2±0.2 4.0±0.2
■ IC — VCE Characteristics (typ.)
3
15mA 10mA
8mA 6mA
5mA
4mA
3mA 2
2mA
IC (A)
1
IB=1mA
0
0
1
2
3
VCE (V)
■ VCE (sat) — IB Temperature Characteristics
1
(IC = 1A)
VCE (sat) (V)
0.5
Ta = 125ºC
75ºC
25ºC
–55ºC
0
0.002
0.01
0.05 0.1
0.4
IB (A)
■ IC — VBE Temperature Characteristics (typ.)
4 VCE = 4V
3
IC (A)
2
Ta = –55ºC
1
25ºC
75ºC
125ºC
0
0
0.5
1.0
1.5
VBE (V)
hFE tontstg tf (µS)
■ hFE — IC Temperature Characteristics (typ.)
5000
(VCE = 4V)
1000 500
100 0.01
Ta = 125ºC 75ºC
25ºC
–55ºC
0.05 0.1
0.5 1
3
IC (A)
■ tontstgtf — IC Characteristics (typ.)
20 tstg
10
VCE = 12V IB1 = –IB2...
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