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STA4470 Datasheet

Part Number STA4470
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet STA4470 DatasheetSTA4470 Datasheet (PDF)

STA4470 S a mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 40V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 11A R DS(ON) (m Ω) Max 12 @ VGS=10V 16 @ VGS=4.5V PDIP-8 1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a TA=25°C TA=70°C TA=25.

  STA4470   STA4470






N-Channel Enhancement Mode Field Effect Transistor

STA4470 S a mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 40V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 11A R DS(ON) (m Ω) Max 12 @ VGS=10V 16 @ VGS=4.5V PDIP-8 1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a TA=25°C TA=70°C TA=25°C TA=70°C Limit 40 ±20 11 8.9 55 2.5 1.6 -55 to 150 Units V V A A A W W °C Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 50 °C/W Details are subject to change without notice. Aug,18,2008 1 www.samhop.com.tw STA4470 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=32V , VGS=0V Min 40 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance b VGS= ±20V , VDS=0V 1 ±100 uA nA VDS=VGS , ID=250uA VGS=10V , ID=11A VGS=4.5V , ID=9.6A VDS=5V , ID=11A 1.0 2.0 10 12 26.5 3 12 16 V m ohm m ohm S pF pF pF ns ns ns ns nC nC nC nC DYNAMIC CHARACTERISTICS c Input Capacitance CISS Output Capacitance C.


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