STB24NM60N
N-channel 600 V, 0.168 Ω , 17 A MDmesh™ II Power MOSFET D²PAK
Features
Order codes STB24NM60N
■ ■ ■
VDSS (@T...
STB24NM60N
N-channel 600 V, 0.168 Ω , 17 A MDmesh™ II Power
MOSFET D²PAK
Features
Order codes STB24NM60N
■ ■ ■
VDSS (@Tjmax) 650 V
RDS(on) max. < 0.19 Ω
ID 17 A
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
3 1
D²PAK
Application
Switching applications
Description
These N-channel 600 V Power
MOSFET devices are made using the second generation of MDmesh™ technology. This revolutionary Power
MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converter. Figure 1. Internal schematic diagram
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3
!-V
Table 1.
Device summary
Marking 24NM60N Package D²PAK Packaging Tape and reel
Order codes STB24NM60N
February 2011
Doc ID 010008 Rev 1
1/15
www.st.com 15
http://www.Datasheet4U.com
Contents
STB24NM60N
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 4 5 6
Test circuits
.............................................. 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 R...