STB24NM60N

STB24NM60N N-channel 600 V, 0.168 Ω , 17 A MDmesh™ II Power MOSFET D²PAK Features Order codes STB24NM60N ■ ■ ■ VDSS (@Tjmax) 650 V RDS(on) max. < 0.19 Ω ID 17 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 3 1 D²PAK Application Switching applications Description These N-channel 600 V Power MOSFET devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converter. Figure 1. Internal schematic diagram $ ' 3 !-V Table 1. Device summary Marking 24NM60N Package D²PAK Packaging Tape and reel Order codes STB24NM60N February 2011 Doc ID 010008 Rev 1 1/15 www.st.com 15 http://www.Datasheet4U.com Contents STB24NM60N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 6 Test circuits .............................................. 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 R...