STB31N65M5, STF31N65M5 STP31N65M5, STW31N65M5
Datasheet
N-channel 650 V, 0.124 Ω, 22 A, MDmesh M5 Power MOSFETs in D2PAK...
STB31N65M5, STF31N65M5 STP31N65M5, STW31N65M5
Datasheet
N-channel 650 V, 0.124 Ω, 22 A, MDmesh M5 Power
MOSFETs in D2PAK, TO‑220FP, TO‑220 and TO-247 packages
TAB
3 1
D2PAK
TAB
3 2 1
TO-220FP
TO-220 1 2 3
TO-247
3 2 1
D(2, TAB)
Features
Order code
VDS @ TJMAX
RDS(on ) max.
STB31N65M5
STF31N65M5 STP31N65M5
710 V
0.148 Ω
STW31N65M5
Extremely low RDS(on) Low gate charge and input capacitance Excellent switching performance 100% avalanche tested
ID 22 A
Package D2PAK TO-220FP TO-220 TO-247
G(1)
Applications
Switching applications
S(3)
Description
AM01475v1_noZen
These devices are N-channel Power
MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.
Product status link STB31N65M5 STF31N65M5 STP31N65M5 STW31N65M5
DS8912 - Rev 4 - April 2019 For further information contact your local STMicroelectronics sales office.
www.st.com
STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Value
Symbol
Parameter
D²PAK, TO-220, TO-247
VGS
Gate-source
voltage
±25
Drain current (continuous) at
ID
TC = 25 °C
22
Drain current (continuous) at
ID
TC = 100 °C
13.9
IDM (2)
Drain current (pulsed)
88
PTOT
Total power dissipation at TC = 25 °C
150
VISO
...