STB33N60DM6

STB33N60DM6 Datasheet N-channel 600 V, 115 mΩ typ., 25 A, MDmesh™ DM6 Power MOSFET in a D2PAK package TAB 2 3 1 D²PAK D(2, TAB) G(1) S(3) AM01475V1 Features Order code VDS RDS(on) max. STB33N60DM6 600 V 128 mΩ Fast-recovery body diode Lower RDS(on) per area vs previous generation Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected ID 25 A Applications Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STB33N60DM6 Product summary Order code STB33N60DM6 Marking 33N60DM6 Package D2PAK Packing Tape and reel DS12904 - Rev 1 - February 2019 For further information contact your local STMicroelectronics sales office. www.st.com STB33N60DM6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slo...