STBV42

STBV42 High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed Applications ■ Compact fluorescent lamps (CFLs) ■ SMPS for battery charger Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STBV42G and STBV42G-AP are supplied using halogen-free molding compound. TO-92 TO-92AP Figure 1. Internal schematic diagram Table 1. Device summary Order codes STBV42 STBV42-AP STBV42G STBV42G-AP Marking BV42 BV42 BV42G BV42G Package TO-92 TO-92AP TO-92 TO-92AP July 2009 Doc ID 7232 Rev 6 Packaging Bulk Ammopack Bulk Ammopack 1/10 www.st.com 10 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VCES VCEO VEBO IC ICM IB IBM PTOT Tstg TJ Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 5 ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature Table 3. Thermal data Symbol Parameter RthJC Thermal resistance junction-case__________max STBV42 Value 700 400 9 1 2 0.5 1 1 -65 to 150 150 Unit V V V A A A A W °C Value 125 Unit °C/W 2/10 Doc ID 723...