STC8550

S 0 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to STC8050 Collector Current: IC=1.5A Collector Power Dissipation: PC=2W (TC=25°C) STC8550 PNP Silicon Transistor 1 TO-92 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -40 -40 -6 -1.5 1 150 -65 ~ 150 Units V V V A W °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE (sat) VBE (sat) VBE (on) Cob fT Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC= -100 µA, IE=0 IC= -2mA, IB=0 IE= -100 µA, IC=0 VCB= -35V, IE=0 VEB= -6V, IC=0 VCE= -1V, IC= -5mA VCE= -1V, IC= -100mA VCE= -1V, IC= -800mA IC= -800mA, IB= -80mA IC= -800mA, IB= -80mA VCE= -1V, IC= -10mA VCB= -10V, IE=0 f=1MHz VCE= -10V, IC= -50mA 100 45 85 40 170 160 80 -0.28 -0.98 -0.66 15 200 Min. -40 -40 -6 -100 -100 300 -0.5 -1.2 -1.0 V V V pF MHz Typ. Max. Units V V V nA nA Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter on Voltage Output Capacitance Current Gain Bandwidth Product hFEClassification Class...