STD03N

Darlington Transistor with built-in compensation diodes STD03N March, 2006 ■Features ● High collector power dissipation: Pc=160W (with TO-3P) ● Low internal impedance by means of thinner die structure ● Built-in temperature compensation diode ● Complementary to STD03P ■Applications ● Audio output ■Package--- MT-105 (TO3P 5-pin) ■Equivalent circuit C(3) B(1) K(2) E(5) Absolute maximum ratings Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Diode Forward Current Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PC Di VF Tj Tstg (Ta= 25°C) Rating Unit 160 V 160 V 5 V 15 A 1 A 160 (Tc= 25°C) W 10 mA 150 °C -55 to 150 °C . Sanken Electric Co.,Ltd. http://www.sanken-ele.co.jp/en/ 1/8 T01-001EA-060309 Darlington Transistor with built-in compensation diodes STD03N March, 2006 Electrical characteristics Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Voltage DC Current Transfer Ratio Collector-Emitter saturation Voltage Base-Emitter saturation Voltage Base-Emitter Voltage Diode Forward Voltage Symbol Test Conditions ICBO VCB=160V IEBO VEB=5V VCEO IC=30mA hFE * VCE=4V, IC=10A VCE(sat) IC=10A, IB=10mA VBE(sat) IC=10A, IB=10mA VBE VCE=20V,IC=40mA Di VF IF=2.5mA MIN. (Ta= 25°C) Limits Unit TYP. MAX. 100 μA 100 μA 160 V 5000 20000 2.0 V 2.5 V 1190 mV 705 mV * hFE rank: 5000 to 12000(O), 8000 to 2000...