STD1NK60T4
N-channel 600 V, 7.3 Ω typ., 1 A SuperMESH™ Power MOSFET in a DPAK package
Datasheet - production data
Feat...
STD1NK60T4
N-channel 600 V, 7.3 Ω typ., 1 A SuperMESH™ Power
MOSFET in a DPAK package
Datasheet - production data
Features
Order code STD1NK60T4
VDS 600 V
RDS(on) max. 8.5 Ω
ID PTOT 1 A 30 W
Figure 1: Internal schematic diagram D(2, TAB)
Extremely high dv/dt capability ESD improved capability 100% avalanche tested Gate charge minimized
Applications
Low power battery chargers Swith mode low power supplies (SMPS) Low power, ballast, CFL (compact
fluorescent lamps)
G(1) S(3)
Order code STD1NK60T4
AM01475v1_noZen
Description
This high
voltage device is an N-channel Power
MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Table 1: Device summary
Marking
Package
Packing
D1NK60
DPAK
Tape and reel
February 2017
DocID030307 Rev 1
This is information on a product in full production.
1/19
www.st.com
Contents
Contents
STD1NK60T4
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 6
3 Test circuits ..................................................................................... 9...