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STD35P6LLF6

STMicroelectronics

P-CHANNEL POWER MOSFET

STD35P6LLF6 P-channel 60 V, 0.025 Ω typ., 35 A STripFET™ F6 Power MOSFET in a DPAK package Datasheet - production data ...


STMicroelectronics

STD35P6LLF6

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Description
STD35P6LLF6 P-channel 60 V, 0.025 Ω typ., 35 A STripFET™ F6 Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram D(2, TAB) G(1) Features Order code STD35P6LLF6 VDSS 60 V RDS(on) max. 0.028 Ω ID 35 A PTOT 70 W  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(3) Order code STD35P6LLF6 AM11258v1 Table 1: Device summary Marking Package 35P6LLF6 DPAK Packaging Tape and Reel April 2017 DocID025600 Rev 3 This is information on a product in full production. 1/16 www.st.com Contents Contents STD35P6LLF6 1 Electrical ratings ............................................................................. 3 2 Electrical charac...




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