STD37P3H6AG
Automotive-grade P-channel -30 V, 11 mΩ typ., -49 A STripFET™ H6 Power MOSFET in a DPAK package
Datasheet -...
STD37P3H6AG
Automotive-grade P-channel -30 V, 11 mΩ typ., -49 A STripFET™ H6 Power
MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram D(2, TAB)
G(1)
Features
Order code
VDS RDS(on) max.
ID
PTOT
STD37P3H6AG -30 V 15 mΩ -49 A 60 W
Designed for automotive applications and AEC-Q101 qualified
Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss
Applications
Switching applications
Description
This device is a P-channel Power
MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power
MOSFET exhibits very low RDS(on) in all packages.
S(3)
Order code STD37P3H6AG
AM11258v1
Table 1: Device summary
Marking
Package
37P3H6
DPAK
Packing Tape and Reel
August 2015
DocID027952 Rev 1
This is information on a product in full production.
1/16
www.st.com
Contents
Contents
STD37P3H6AG
1 Electrical ratings ...........................
