STD3N65M6
Datasheet
N-channel 650 V, 1.4 Ω typ., 3.5 A MDmesh™ M6 Power MOSFET in a DPAK package
TAB 23 1
DPAK
D(2, TAB)
G(1)
S(3)
AM01475V1
Product status link STD3N65M6
Product summary
Order code
STD3N65M6
Marking
3N65M6
Package
DPAK
Packing
Tube
Features
Order code STD3N65M6
VDS 650 V
RDS(on) max. 1.5 Ω
• Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected
ID 3.5 A
Applications
• Swi.
N-channel Power MOSFET
STD3N65M6
Datasheet
N-channel 650 V, 1.4 Ω typ., 3.5 A MDmesh™ M6 Power MOSFET in a DPAK package
TAB 23 1
DPAK
D(2, TAB)
G(1)
S(3)
AM01475V1
Product status link STD3N65M6
Product summary
Order code
STD3N65M6
Marking
3N65M6
Package
DPAK
Packing
Tube
Features
Order code STD3N65M6
VDS 650 V
RDS(on) max. 1.5 Ω
• Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected
ID 3.5 A
Applications
• Switching applications
Description
The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
DS11612 - Rev 2 .