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STD3N65M6 Datasheet

Part Number STD3N65M6
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel Power MOSFET
Datasheet STD3N65M6 DatasheetSTD3N65M6 Datasheet (PDF)

STD3N65M6 Datasheet N-channel 650 V, 1.4 Ω typ., 3.5 A MDmesh™ M6 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) AM01475V1 Product status link STD3N65M6 Product summary Order code STD3N65M6 Marking 3N65M6 Package DPAK Packing Tube Features Order code STD3N65M6 VDS 650 V RDS(on) max. 1.5 Ω • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected ID 3.5 A Applications • Swi.

  STD3N65M6   STD3N65M6






N-channel Power MOSFET

STD3N65M6 Datasheet N-channel 650 V, 1.4 Ω typ., 3.5 A MDmesh™ M6 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) AM01475V1 Product status link STD3N65M6 Product summary Order code STD3N65M6 Marking 3N65M6 Package DPAK Packing Tube Features Order code STD3N65M6 VDS 650 V RDS(on) max. 1.5 Ω • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected ID 3.5 A Applications • Switching applications Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. DS11612 - Rev 2 .


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