STD3N95K5AG

STD3N95K5AG Datasheet Automotive-grade N-channel 950 V, 4.3 Ω typ., 2 A MDmesh K5 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) AM01476v1_tab Features Order code VDS RDS(on)max. ID STD3N95K5AG 950 V 5.0 Ω 2A PTOT 45 W AEC-Q101 qualified Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applications Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STD3N95K5AG Product summary(1) Order code STD3N95K5AG Marking 3N95K5 Package DPAK Packing Tape and reel 1. The HTRB test was performed at 80% V(BR)DSS in compliance with AECQ101 rev. C. All the other tests were performed according to rev. D. DS12161 - Rev 2 - February 2021 For further information contact your local STMicroelectronics sales office. www.st.com STD3N95K5AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current pulsed PTOT Total power dissipation at TC = 25 °C dv/dt (2) Peak diode recovery voltage slope dv/d...